发明名称 SEMICONDUCTOR LIGHT EMISSION ELEMENT
摘要 A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.
申请公布号 US2011316037(A1) 申请公布日期 2011.12.29
申请号 US200913139642 申请日期 2009.12.14
申请人 KAMEI KOJI;OHBA REMI;HODOTA TAKASHI;SHOWA DENKO K.K. 发明人 KAMEI KOJI;OHBA REMI;HODOTA TAKASHI
分类号 H01L33/62 主分类号 H01L33/62
代理机构 代理人
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