发明名称 |
SEMICONDUCTOR LIGHT EMISSION ELEMENT |
摘要 |
A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes. |
申请公布号 |
US2011316037(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US200913139642 |
申请日期 |
2009.12.14 |
申请人 |
KAMEI KOJI;OHBA REMI;HODOTA TAKASHI;SHOWA DENKO K.K. |
发明人 |
KAMEI KOJI;OHBA REMI;HODOTA TAKASHI |
分类号 |
H01L33/62 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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