发明名称
摘要 A semiconductor device manufacturing method is disclosed. A semiconductor substrate having a separation region and a semiconductor region which covers the separation region entirely is prepared. One or a plurality of circuit elements are formed in the semiconductor region. The semiconductor substrate is split at the separation region.
申请公布号 JP4838504(B2) 申请公布日期 2011.12.14
申请号 JP20040261567 申请日期 2004.09.08
申请人 发明人
分类号 H01L21/02;H01L27/12 主分类号 H01L21/02
代理机构 代理人
主权项
地址