A nanoscale electronic device

摘要

The invention relates to a nanoscale electronic device comprising in particular a metal insulator semiconductor field effect transistor (MISFET). It comprises at least one nanowire (205) as an active part of the device, the nanowire (205) being formed from a substrate (210). The nanowire is provided with at least a first and second contact (240,250), contacting the nanowire at different levels from the substrate. There is provided a first external electrode (241) connecting to the first contact (240), and a second external electrode (251) connecting to the second contact (250), the first external electrode (241) being arranged in a cross-bar configuration with the second external electrode (251).