<p>A method of manufacturing a plurality of spacers in a film stack includes forming at least one electrically-conductive element having sidewalls on a substrate, depositing a plurality of passivation layers proximate to the substrate, and performing etching on one of the plurality of passivation layers to form a plurality of spacers substantially across from the sidewalls of the at least one electrically-conductive element.</p>
申请公布号
WO2011133133(A1)
申请公布日期
2011.10.27
申请号
WO2010US31565
申请日期
2010.04.19
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;MARTY, VALERIE;COOK, GALEN