SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A method for fabricating a semiconductor device and a semiconductor device are provided. The method comprises: providing a substrate(101); forming a gate stacking on the substrate(102); forming an interlayer dielectric layer covering the device(103); etching the interlayer dielectric layer on both sides of the gate stacking and the substrate thereunder, so as to form recesses belonging to a source region and a drain region, respectively(104); forming a metal diffusion block layer in the recesses by depositing(105); filling the recesses with metal to form the source region and the drain region(106). With the method for fabricating a semiconductor device and a semiconductor device, the parasitic resistance of the source/drain in the MOS device can be reduced, the stress of the source/drain to the channel can be enhanced, the process temperature can also be decreased, the compatibility of the high K gate dielectric layer and the metal gate can be improved.