SILICON ON INSULATOR READ-WRITE NON-VOLATILE MEMORY COMPRISING LATERAL THYRISTOR AND TRAPPING LAYER,申请号EP20050740193-传众专利搜索

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发明名称	SILICON ON INSULATOR READ-WRITE NON-VOLATILE MEMORY COMPRISING LATERAL THYRISTOR AND TRAPPING LAYER
摘要
申请公布号	EP1743339(B1)	申请公布日期	2011.10.05
申请号	EP20050740193	申请日期	2005.04.28
申请人	MICRON TECHNOLOGY, INC.	发明人	BHATTACHARYYA, ARUP
分类号	G11C11/39;G11C16/34;H01L21/28;H01L21/336;H01L27/102;H01L27/12;H01L29/74;H01L29/749;H01L29/768;H01L29/87	主分类号	G11C11/39
代理机构		代理人
主权项
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