发明名称 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To increase long-lasting connection reliability to improve electro-migration resistance in a semiconductor package. SOLUTION: An electrode pad of a semiconductor element 1 is connected with an electrode pad 20 on a substrate 21 with a solder ball. The solder ball is constituted of a metal core part 11, and a solder part 10 which is disposed around the metal core part 11 and is lower that the core part 11 in rigidity and melting point. The solder ball is connected with the semiconductor element 1 by reflow. Then, the semiconductor element 1 with the solder ball attached is ultrasonic-connected with the substrate 21, and a metal core 11 is directly connected with an electrode 20 on the substrate 21 side, thereby attaining connection reduced in thermal stress and resistance. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011187635(A) 申请公布日期 2011.09.22
申请号 JP20100050615 申请日期 2010.03.08
申请人 HITACHI METALS LTD 发明人 FUJIWARA SHINICHI;CHIWATA NOBUHIKO;FUJIYOSHI MASARU;WAKANO MOTOKI
分类号 H01L21/60;H01L23/12;H05K3/32;H05K3/34 主分类号 H01L21/60
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