<p>A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture.</p>
申请公布号
CA2783380(A1)
申请公布日期
2011.09.01
申请号
CA20112783380
申请日期
2011.02.16
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
BEDELL, STEPHEN W.;FOGEL, KEITH E.;LAURO, PAUL, A.;SADANA, DEVENDRA;SHAHRJERDI, DAVOOD