| 摘要 |
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include forming a stacked body by alternately stacking a plurality of insulating layers and a plurality of conductive layers above a substrate and forming a resist film above the stacked body. The method can include plasma-etching the insulating layers and the conductive layers by using the resist film as a mask. The method can include forming a hardened layer in an upper surface of the resist film by plasma treatment using a gas containing at least one selected from a group consisting of boron, phosphorus, arsenic, antimony, silicon, germanium, aluminum, gallium, and indium. The method can include slimming a plane size of the resist film by plasma treatment using an oxygen-containing gas in a state where the hardened layer is formed in the upper surface of the resist film.
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