| 摘要 |
<p>Disclosed is a semiconductor device which is provided with an n-channel type first TFT and a p-channel type second TFT formed on the same substrate. The first TFT has a first semiconductor layer (27), and the second TFT has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (27) are formed from the same film, and each has a sloping section (27e, 22e) located around the edge thereof, and a main section (27m, 22m) comprising the part excluding the sloping section. A p-type impurity having a higher concentration than the main section (27m) of the first semiconductor layer, the main section (22m) of the second semiconductor layer, and the sloping section (22e) of the second semiconductor layer, is introduced only on a part of the sloping section (27e) of the first semiconductor layer. Thus, the drive voltage of the semiconductor device provided with an n-type TFT and a p-type TFT can be reduced.</p> |
