WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS
摘要
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
申请公布号
WO2011084223(A2)
申请公布日期
2011.07.14
申请号
WO2010US55402
申请日期
2010.11.04
申请人
APPLIED MATERIALS, INC.;WANG, LINLIN;MALLICK, ABHIJIT BASU;INGLE, NITIN K.
发明人
WANG, LINLIN;MALLICK, ABHIJIT BASU;INGLE, NITIN K.