| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask manufacturing method and a charged particle beam lithography system, which suppress a reduction in pattern dimensional accuracy by absorption of an amine compound of a resist film in blanks. <P>SOLUTION: After a chemically amplified resist film is formed on a substrate to perform a first pre-baking process, drawing is performed with charged particle beams without exposing to the atmosphere or in a state that all the amine compound absorbed into the chemically amplified resist film is substantially desorbed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
