| 摘要 |
Phase change memory devices and fabrication methods thereof are presented. A phase change memory device includes a substrate structure. A first electrode is disposed on the substrate structure. A hollowed-cone hydrogen silsesquioxane (HSQ) structure is formed on the first electrode. A multi-level cell phase change memory structure is disposed on the hollowed-cone HSQ structure. A second electrode is disposed on the multi-level cell phase change memory structure.
|
