| 摘要 |
PROBLEM TO BE SOLVED: To provide an abrasive for copper and a chemical mechanical polishing method using the abrasive, which polish a copper film at a high speed with high flatness, finish polishing in a short period of time, and secure sufficient productivity even in applications in which grinding a thick metal film such as a high performance wiring board or a TSV is needed. SOLUTION: The abrasive for copper contains inorganic acid, amino acid, protective film forming agent, abrasive grain, oxidizing agent, organic acid, and water, wherein the inorganic acid contains at least both sulfuric acid and phosphoric acid, and the pH of the abrasive is larger than the pKa of the amino acid and organic acid, and is 4.0 or less. COPYRIGHT: (C)2011,JPO&INPIT |
