CAPACITOR STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE SAME, METHOD OF FORMING A CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A capacitor structure, semiconductor device with the same, method for forming a capacitor, and method for manufacturing a semiconductor device using the same are provided to form a seed formation preventing film when a lower electrode is formed using a seed which has a hemi spherical shape, thereby preventing a plug connected to the lower electrode from being damaged. CONSTITUTION: A seed formation preventing film(140) and a sacrificing film are formed on an interlayer insulating film(110) with a plug. An opening penetrates the sacrificing film and the seed formation preventing film. A seed is formed on the inner wall of the opening. A lower electrode covering the seed is formed on the inner wall of the opening. The sacrificing film and the seed are removed. A dielectric film(180) and an upper electrode(190) are formed on the lower electrode.