发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.
申请公布号 US7940009(B2) 申请公布日期 2011.05.10
申请号 US20080274650 申请日期 2008.11.20
申请人 TOKYO ELECTRON LIMITED 发明人 ISHIBASHI KIYOTAKA;NOZAWA TOSHIHISA
分类号 H05H1/46;C23C16/00;H01J37/32;H01L21/3065 主分类号 H05H1/46
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