| 摘要 |
A semiconductor device has semiconductor elements formed on a silicon substrate. A first one of the semiconductor elements has a region formed with a surface orientation of <100>. A second one of the semiconductor elements has a region formed with a surface orientation of <110>or <111>. A third one of the semiconductor elements has a region formed with a surface orientation different from the respective surface orientations of the regions of the first and second semiconductor elements.
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