发明名称 |
Schottky diode structure with multi-portioned guard ring and method of manufacture |
摘要 |
In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive contact layer forms a first Schottky barrier with the region of semiconductor material. The conductive contact layer overlaps the second portion and forms a second Schottky barrier that has an opposite polarity to the first Schottky barrier. The conductive contact layer does not overlap the first portion, which forms a pn junction with the region of semiconductor material.
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申请公布号 |
US7875950(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20070683502 |
申请日期 |
2007.03.08 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
TU SHANGHUI L.;KURAMAE FUMIKA |
分类号 |
H01L29/47 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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