| 摘要 |
PROBLEM TO BE SOLVED: To suppress a rise of an initial threshold voltage of a memory cell caused by an influence of an ultraviolet ray while reducing an area of a region where a contact is formed.SOLUTION: A bit line diffusion layer 5 and a plurality of word lines 7a, 7b and 7c including the dummy word line 7a are formed on a semiconductor substrate 1, and sidewall insulating films 8 are formed on side faces of the word lines 7a, 7b and 7c to fill gaps between and among the word lines 7a, 7b and 7c. A first interlayer insulating film 9 is formed to cover the semiconductor substrate 1, the bit line diffusion layer 5, the word lines 7a, 7b and 7c, and the sidewall insulating film 8, a groove for exposing the word lines 7a, 7b and 7c and the sidewall insulating film 8 is formed by removing a part of the first interlayer insulating film 9, and then the groove is filled with UV shielding films 10 which are formed on the exposed word lines 7a, 7b and 7c and the sidewall insulating film 8. The groove is formed so that the end of the groove in the extending direction of the bit line diffusion layer 5 is located above the dummy word line 7a. |
