发明名称 METHOD FOR GROWING CRYSTAL
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for growing a crystal which enable a prolonged use of a quartz crucible, and the improvement of operational efficiency. <P>SOLUTION: In the method of growing a crystal, the processes of: supplying molten material into a crucible coated with a releasing material on its inner face; forming a protruded part on the surface of the crystal by hardening the molten material in the crucible and immersing a crystal piece into a molten layer at a step wherein the residual molten material is not greater than 30%; and taking out the crystal from the crucible using the protruded part are repeatedly carried out reusing the same crucible. Further, in the method of growing a crystal, the silicon crystal may be taken out from the crucible while using the hanging device which grips the protruded part and applying vibration to a hanging device. Yet further, the silicon crystal may be taken out from the crucible while applying vibration to the crucible. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010285331(A) 申请公布日期 2010.12.24
申请号 JP20090142817 申请日期 2009.06.15
申请人 HORIOKA YUKICHI 发明人 HORIOKA YUKICHI
分类号 C30B28/06;B22D25/04;C01B33/02;C30B29/06;H01L31/04 主分类号 C30B28/06
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