发明名称 |
MEMORY DEVICE AND METHOD FOR SENSING AND FIXING MARGIN CELLS |
摘要 |
A programmable resistance memory device with a margin cell detection and refresh resources. Margin cell detection and refresh can comprise reading a selected cell, measuring a time interval which correlates with resistance of the selected cell during said reading, and enabling a refresh process if the measured time falls within a pre-specified range. The refresh process includes determining a data value stored in the selected cell, using for example a destructive read process, and refreshing the data value in the selected cell. The time interval can be measured by detecting timing within the sensing interval of a transition of voltage or current on a bit line across a threshold.
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申请公布号 |
US2010321987(A1) |
申请公布日期 |
2010.12.23 |
申请号 |
US20090488995 |
申请日期 |
2009.06.22 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;SHIH YEN-HAO |
分类号 |
G11C11/00;G11C7/00;G11C7/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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