| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an avalanche breakdown is stably generated in a pn junction when a breakdown voltage is applied, and to provide a method of manufacturing the same. SOLUTION: In the semiconductor device, an MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) includes an n-type drift layer 2 formed on an n-type substrate 1 of silicon carbide, and a p-type body layer 3 selectively formed on the n-type drift layer 2. The MOSFET is a punch-through type element, and the p-type body layer 3 has, at a center part (contact region 3c), a part having a longer trailing pattern of a p-type impurity concentration profile along the depth of the n-type drift layer 2 than an end (channel formation region 3b or terminal region 5). COPYRIGHT: (C)2011,JPO&INPIT |
