GROUP III NITRIDE SEMICONDUCTOR LASER DIODE, AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER DIODE

摘要

Disclosed is a group III nitride semiconductor laser diode which has a cladding layer capable of providing high light confinement effect and carrier confinement effect. An n-type Al0.08Ga0.92N cladding layer (72) is grown on a (20-21)-plane GaN substrate (71) in such a manner that the lattice is relaxed. A GaN light guide layer (73a) is grown on the n-type cladding layer (72) in such a manner that the lattice is relaxed. An active layer (74), a GaN light guide layer (73b), an Al0.12Ga0.88N electron blocking layer (75) and a GaN light guide layer (73c) are grown on the light guide layer (73a) in such a manner that the lattice is not relaxed, respectively. A p-type Al0.08Ga0.92N cladding layer (76) is grown on the light guide layer (73c) in such a manner that the lattice is relaxed. A p-type GaN contact layer (77) is grown on the p-type cladding layer (76) in such a manner that the lattice is not relaxed, thereby producing a semiconductor laser (11a). The dislocation densities of junctions (78a-78c) are higher than the dislocation densities of the other junctions.