发明名称 |
Field effect transistor and method for fabricating the same |
摘要 |
A field effect transistor includes a first semiconductor layer made of a multilayer of a plurality of semiconductor films and a second semiconductor layer formed on the first semiconductor layer. A source electrode and a drain electrode are formed on the second semiconductor layer to be spaced from each other. An opening having an insulating film on its inner wall is formed in a portion of the second semiconductor layer sandwiched between the source electrode and the drain electrode so as to expose the first semiconductor layer therein. A gate electrode is formed in the opening to be in contact with the insulating film and the first semiconductor layer on the bottom of the opening.
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申请公布号 |
US7834380(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20050297386 |
申请日期 |
2005.12.09 |
申请人 |
PANASONIC CORPORATION |
发明人 |
UEDA TETSUZO;ISHIDA HIDETOSHI;TANAKA TSUYOSHI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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