THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to reduce a channel length of a semiconductor layer and remove a protrusion part of a semiconductor layer. CONSTITUTION: The first pattern layer is formed on a transparent insulating substrate(10). The second pattern layers are formed on both sides of the first pattern layer. A plating unit(360) is formed on at least one side of the second pattern. The first and second pattern layers are continuously formed on the transparent insulating substrate without interposition of another layer.