| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a through electrode, and its manufacturing method. <P>SOLUTION: In the semiconductor device, a part of a substrate 402s including a pad 408 is removed to form a via-hole 420. An insulating film 410 is formed on the substrate. A part of the insulating film is removed to form opening portions 435a, 435b including a plurality of openings exposing a part of the pad. The via-hole is filled to form the penetrating electrode 440 which is electrically connected to the pad through any one of the plurality of openings. A part of the pad is opened through another one of the plurality of openings. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2010245536(A) |
申请公布日期 |
2010.10.28 |
| 申请号 |
JP20100085898 |
申请日期 |
2010.04.02 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JANG DONG-HYEON;LEE IN-YOUNG;KIN NANSHAKU |
| 分类号 |
H01L21/3205;H01L23/12;H01L23/52;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/3205 |
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