LIGHT EMITTING DIODE HAVING NITRIDE BASED SEMICONDUCTOR LAYER COMPRISING INDIUM

摘要

PURPOSE: A light emitting diode is provided to improve the reliability of a device and light efficiency by improving the contact resistance between a p-type nitride semiconductor layer and a transparent layer. CONSTITUTION: An active region(29) is formed on an n-type nitride semiconductor layer(27). An active region has a multiple quantum well. The active region comprises an InGaN quantum-well layer. The p-type nitride semiconductor layer(31) is formed on the active region. The p-type nitride semiconductor layer comprises Al. The nitride semiconductor layer(33) is formed on the p-type nitride semiconductor layer. The nitride semiconductor layer comprises the indium. A transparent electrode layer is formed on the nitride semiconductor layer.