| 摘要 |
In a method of cutting a semiconductor wafer in which the semiconductor wafer 6 is cut by plasma etching, a protective sheet 30 on which a metallic layer 30 b, a plasma etching rate of which is low, is formed on one face of an insulating sheet 30 a is stuck on to a circuit forming face 6 a by an adhesive layer 30 c, and plasma is exposed onto an opposite side to the circuit forming face 6 a from a mask side which is formed by covering regions except for cutting lines 31 b with a resist film 31 a so as to conduct plasma etching on portions of the cutting lines. Due to the above structure, it is possible to use the metallic layer as an etching stop layer for suppressing the progress of etching. Therefore, fluctuation of the progress of etching can be avoided and heat damage caused on the protective sheet can be prevented. |
