| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to obtain a overlay key at the side of a profile by forming a metal pattern with slurry having low selectivity. CONSTITUTION: An PR pattern is formed on a semiconductor substrate(601) to define a trench region. A trench region is formed by performing an etching process using the PR pattern as a mask. The trench region is buried by gap-filling a metal. The buried metal is planarized through a hard type pad and a slurry with a relative lower selection to form a metal wiring(604a).
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