发明名称 |
Method and Composition for Chemical Mechanical Planarization of A Metal |
摘要 |
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.
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申请公布号 |
US2010167545(A1) |
申请公布日期 |
2010.07.01 |
申请号 |
US20090632111 |
申请日期 |
2009.12.07 |
申请人 |
DUPONT AIR PRODUCTS NANOMATERIALS LLC |
发明人 |
SHI XIAOBO;PALMER BENTLEY J.;SAWAYDA REBECCA A.;CODER FADI ABDALLAH;PEREZ VICTORIA |
分类号 |
H01L21/306;C09K13/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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