| 摘要 |
A CMOS diode and method of making it are disclosed. In one embodiment, the diode comprises a silicon substrate having an N doped region and a P doped region. A first silicide region is formed on the N doped region of the silicon substrate, and a second silicide region formed on the P doped region of the silicon substrate. The first silicide region is comprised of a material having a bandgap value lower than the bandgap value of the material comprising the second silicide region. The result is a diode where the workfunction of each region of silicide more closely matches the workfunction of the doped silicon it contacts, resulting in reduced contact resistance. This provides for a diode with improved performance characteristics.
|
