发明名称 |
Nano-imprint lithography methods |
摘要 |
In forming a pattern on a substrate with reduced pattern error using a mold having an area smaller than an area of the substrate, a first resin pattern is formed on at least a first of a plurality of regions of an etching object layer by imprinting resin applied to the etching object layer using a first mold The etching object layer is then etched using the first resin pattern as an etching mask. A second resin pattern is formed on at least a second of the plurality of regions by imprinting resin applied to the etching object layer using a second mold. The etching object layer is again etched using the second resin pattern as an etching mask.
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申请公布号 |
US2010140220(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090654023 |
申请日期 |
2009.12.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO YOUNG TAE;LEE SUK WON;KWON SIN;SEO JUNG WOO;KIM JEONG GLL |
分类号 |
C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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