发明名称 |
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING TRENCH SHIELD ELECTRODE AND METHOD |
摘要 |
In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion.
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申请公布号 |
US2010123187(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20080271030 |
申请日期 |
2008.11.14 |
申请人 |
BURKE PETER A;GRIVNA GORDON M;VENKATRAMAN PRASAD |
发明人 |
BURKE PETER A.;GRIVNA GORDON M.;VENKATRAMAN PRASAD |
分类号 |
H01L21/28;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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