| 摘要 |
The invention relates to an LED module comprising an LED chip (1), with an active gallium nitride layer (2) and a silicon platform (3) on which the LED chip is arranged, wherein the silicon platform (3) has two electrodes (4a, 4b) on the side (3b) facing away from the LED chip (1)which are electrically connected to the LED chip (1) and wherein the thickness of the gallium nitride layer (2) of the LED chip (1) is between 2 and 10 µm, preferably 1 to 5 µm. |
