| 摘要 |
PURPOSE: A manufacturing method of a CMOS image sensor is provided to uniformly maintain the output characteristic of the photo diode by eliminating the irregularity of the output of the photo diode generated by a process variable when a separator film using an implant is used. CONSTITUTION: A buffer oxide layer(12), a nitride film(14) for a hard mask, and an oxide film(16) for a hard mask are successively formed on a semiconductor substrate(10). A part of the oxide film for a hard mask and the nitride film for a hard mask are selectively removed In order to expose a region where an implant separator film and an element isolation film are formed. A first photo resist pattern is formed. The implant separator film(20) is formed by an ion implantation using a first photo resist pattern. A second photoresist pattern(22) is formed. The remaining oxide film for a hard mask and the nitride layer for a hard mask are removed by using the second photoresist pattern.
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