发明名称 PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION
摘要 A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.
申请公布号 US2010096253(A1) 申请公布日期 2010.04.22
申请号 US20080256428 申请日期 2008.10.22
申请人 APPLIED MATERIALS, INC 发明人 CAO YONG;TANG XIANMIN;GUNG TZA-JING;GOPALRAJA PRABURAM
分类号 C23C14/34 主分类号 C23C14/34
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