| 摘要 |
<p>PURPOSE: A method for forming gate of transistor embodies the dual gate structure by using the dry oxidation and radical oxidation process. The GOI(Gate Oxide Integrity) feature security can be embodied. CONSTITUTION: Trenches establishing the active area are formed in the semiconductor substrate(100). The liner(310) including the nitride layer is formed on the trench wall side. A part of the active area is etched selectively and the recess groove is formed. The plasma oxidation offering the oxygen plasma on the active area is proceed and the plasma oxide layer(323) is formed. It the strip and the nitrogen contaminated layer of the accompanied active area is removed the plasma oxide layer with the nitrogen fusing according to the erosion of the nitride layer.</p> |
