| 摘要 |
<p>PURPOSE: The formation method of the non-volatile memory device having charge trapping layer eliminates the damage layer of the charge trapping layer to the phosphoric acid. The charge loss originated in the damage layer of the charge trapping layer is prevented. CONSTITUTION: The gate stack including the tunneling layer pattern(140) on the semiconductor substrate(100), charge trapping layer pattern, and the shielding layer pattern(130) and control gate electrode pattern is formed. The ion injection process is advanced in the above semiconductor top of the substrate and the impurity region(150) is formed within the semiconductor substrate of the gate stack both sides. It is from the surface the inner side the recess and the damage layer of the damaged charge trapping layer is removed from the process forming gate stack or the process forming impurity region.</p> |
