发明名称 |
FILM DEPOSITION APPARATUS AND SUBSTRATE-TREATING APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus which prevents a plurality of reaction gases from being mixed, and surely carries a substrate in and out. <P>SOLUTION: The film deposition apparatus for forming a thin film in a vacuum chamber 1 by supplying first and second reaction gases thereinto includes: a turntable 2; a first reaction-gas supply part 31 and a second reaction-gas supply part 32 which are set so as to direct the center of rotation from the periphery of the turntable 2; first separation-gas supply parts 41 and 42 which are placed between the supply parts 31 and 32; a first space P1 which includes the first reaction-gas supply part 31 and has a first height H1; a second space P2 which includes the second reaction-gas supply part 32 and has a second height H2; a third space D which includes the first separation-gas supply part 41 and installed so as to be lower than the heights H1 and H2; and a motor 27 which is placed at a lower part of the center of rotation of the turntable 2 and rotationally drives the turntable 2. The rotating shaft of the turntable and the driving shaft of the motor are connected so as not to run idle. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010059499(A) |
申请公布日期 |
2010.03.18 |
申请号 |
JP20080227028 |
申请日期 |
2008.09.04 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
KATO HISASHI;HONMA MANABU;HAISHI TOMOKI |
分类号 |
C23C16/455;C23C16/458;H01L21/31 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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