THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME

摘要

PURPOSE: A thin film transistor substrate, a manufacturing method thereof, and a display device having the same are provided, which can form a thin film transistor substrate that the switching characteristic is improved. CONSTITUTION: A thin film transistor substrate comprises a gate electrode(GE), a semiconductor pattern(150), a first etching prevention pattern(160), a second etching prevention pattern(180), a source electrode(SE), and a drain electrode(DE). The gate electrode is equipped on the substrate(100). The semiconductor pattern is equipped on the top of the gate electrode and has a source area, a drain region, and a channel region. The first etching prevention pattern is equipped on the semiconductor pattern and covers the channel region. The etching prevention is equipped on the first etching prevention pattern. The source electrode is equipped on the semiconductor pattern in the source area. The drain electrode is separated from the source electrode in the drain region and is equipped on the semiconductor pattern.