| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that ensures an electric isolating property between a semiconductor substrate and a conductive member for guiding an output of a photodiode from one major surface side of the semiconductor substrate to the other major surface side thereof, and also to provide a method of manufacturing the semiconductor device. <P>SOLUTION: An n-type semiconductor substrate 105 is formed with a through-hole 105c which is provided between adjacent p-type impurity diffusion regions 109 to pass through from one major surface side of the substrate to the other major surface side thereof. The through-hole 105c is provided for each of the p-type impurity diffusion regions 109. A thermal oxidation film 113 is formed on a wall surface of the n-type semiconductor substrate 105 defining the through-hole 105c. In the through-hole 105c, a through wiring 115 as a conductive member is provided inside the thermal oxidation film 113. Part of one end side of the through wiring 115 is electrically connected to a part of one end side of an electrode wiring 117. The electrode wing line 117 is formed on the thermal oxidation film 107, and the other end side of the electrode wiring is electrically connected to the p-type impurity diffusion region 109. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
