| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target material for producing an Ni-W-(Si, B)-based intermediate film in a vertical magnetic recording medium, and to provide a thin film produced using the sputtering target material for producing a thin film. SOLUTION: The sputtering target material produces an Ni-W-(Si, B)-based intermediate layer film in a vertical magnetic recording medium comprising, by at%, 1 to 20% W and Si and B by 0.1 to 10% in total, and the balance Ni. Further, a sputtering target material is disclosed in which compositional ratio between Si and B is 2:8 to 6:4. The thin film is produced using the sputtering target material for producing the thin film. COPYRIGHT: (C)2010,JPO&INPIT |
