| 摘要 |
FIELD: technological processes. ^ SUBSTANCE: invention is related to production of highly pure tungsten for spattering targets. Method includes cleaning of ammonium paratungstate from admixtures by ammonia sulfide and further treatment of solution anion-exchange resin AM-p. Then thermal decomposition of ammonium paratungstate is executed at the temperature of 600-800C to produce tungsten trioxide, as well as cleaning of tungsten trioxide by zone sublimation at the temperature of 900-950C in continuous flow of oxygen. After sublimation, heterogeneous recovery of tungsten trioxide is carried out by hydrogen at the temperature of 700-750C to produce tungsten powder, as well as tungsten powder pressing to produce bar. Then electronic vacuum zone recrystallisation of bar is carried out to produce crystals of highly pure tungsten, as well as electronic vacuum melting in flat crystalliser with melting of flat bar from each side to the whole depth at least twice. Device is also suggested for zonal sublimation of tungsten trioxide. ^ EFFECT: sharp increase in purity of tungsten intended for thin-film metallisation by magnetron spattering of targets. ^ 2 cl, 2 dwg, 1 ex |
