| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve photo sensitivity of the image sensor, by controlling an optical path with a diffractive pattern formed on a photo diode. CONSTITUTION: First and second photo diodes(21,22) are formed on a semiconductor substrate(10). First and second bottom diffractive patterns(31,32) are respectively formed on the first and the second photo diode. An inter-layer insulating film(40) is formed on the semiconductor substrate including the first and the second bottom diffractive pattern. A first and a second top diffractive pattern(61,62) are formed on the inter-layer insulating film corresponding to the first and the second bottom diffractive pattern. The first and the second bottom diffractive pattern are formed with at least two slits. The first and the second top diffractive pattern are formed in the same type as the first and the second bottom diffractive pattern.
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