发明名称 Semiconductor device integrated with heat sink and method of fabricating the same
摘要 The present invention is to provide a semiconductor device which includes a mounting base and a light-emitting device. The mounting base includes a substrate of a first semiconductor material and a first layer of a material with high thermal conductivity formed over the substrate. Furthermore, the light-emitting device is a multi-layer structure which includes at least a second layer of a second semiconductor material. The light-emitting device is mounted on the first layer of the mounting base. Moreover, the difference of the thermal expansion coefficient between the first semiconductor material and the second semiconductor material is between a predetermined range.
申请公布号 US7619259(B2) 申请公布日期 2009.11.17
申请号 US20060636522 申请日期 2006.12.11
申请人 HIGH POWER OPTOELECTRONICS, INC. 发明人 HUANG KUO-HSIN
分类号 H01L33/02 主分类号 H01L33/02
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