发明名称 |
METHODS AND SYSTEMS FOR DETERMINING A DEFECT CRITICALITY INDEX FOR DEFECTS ON WAFERS |
摘要 |
Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.
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申请公布号 |
US2009257645(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080102343 |
申请日期 |
2008.04.14 |
申请人 |
CHEN CHIEN-HUEI ADAM;XIONG YAN;ZHANG JIANXIN;CHANG ELLIS;FANG TSUNG-PAO |
发明人 |
CHEN CHIEN-HUEI (ADAM);XIONG YAN;ZHANG JIANXIN;CHANG ELLIS;FANG TSUNG-PAO |
分类号 |
G06K9/00 |
主分类号 |
G06K9/00 |
代理机构 |
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