| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a production process of a capacitor, which includes ONO structure with superior film quality and of which dielectric film is formed thin without suffering an influence of a native oxide layer in a simple production process. <P>SOLUTION: A lower layer electrode 3 which consists of polysilicon is formed (Fig.(a)), and the lower layer electrode 3 is dipped in acid solution, for example mixed solution of sulphuric acid and nitric acid, which oxidizes the polysilicon, so that silicon oxide film 4 is formed on the surface of the lower layer electrode 3 (Fig.(b)). Silicon nitride film 5 is deposited on the silicon oxide film 4, silicon oxide film 6 is formed on the surface of silicon nitride film 5 (Fig.(c)) by using a method, by which the surface of the silicon nitride film 5 is oxidized, and the like, and upper layer electrode 7 is formed thereon (Fig.(d)). <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
