| 摘要 |
A fuse and a manufacturing method thereof are provided to improve yield of a memory device by preventing damage to a bottom structure during a laser irradiation. A bottom metal contact(206) is connected to one side of a top part of a bottom structure. One side of a bridge layer(208) is connected to a top part of the bottom metal contact. A top contact contact(212) has a gap narrower than a gap of the bottom metal contact. The bottom structure is not overlapped with the top metal contact. The bridge layer is made of material capable of being connected to the bottom metal contact and the top metal contact. A highest bridge layer and a highest metal contact are included between the top metal contact and a metal line(214).
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