| 摘要 |
An integrated circuit device (e.g., a logic or memory device) having a memory section including a plurality of memory cells, wherein each memory cell thereof includes at least one n-channel transistor having a gate, gate dielectric and first, second and body regions, wherein the gate of the at least one n-channel transistor of each memory cell includes one or more gate materials, disposed on or over the gate dielectric material. The one or more gate materials may include a semiconductor material having one or more acceptor-type doping species disposed therein. The integrated circuit device further includes a logic section including at least one n-channel transistor having a gate, gate dielectric and first, second and body regions, wherein the gate of the n-channel transistor of the logic section may include a gate semiconductor material disposed on or over the gate dielectric material. The work functions of the gates of the n-channel transistors of such memory cells may be greater than the work function of the gate of the n-channel transistor of the logic section. In certain embodiments, the work functions of the transistors of such memory cells may be substantially similar or the same as the work functions of the transistors in the logic section wherein the gate material of the transistors of the memory cells and the transistors of the logic section may be comprised of a mid-gap gate material with a work function of about 4.5 eV. Also disclosed are inventive methods of manufacturing such integrated circuit devices.
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