| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device to form an element in thyristor structure through crystal growth of a p-type region and an n-type region on a semiconductor substrate with no generation of a leakage current. SOLUTION: The semiconductor device includes an element including a p-type region, an n-type region, and a p-type region in the surface side of a semiconductor substrate 1 with the n-type region provided in contact in this sequence, wherein at least one region is formed of a crystal growth layer achieved with crystal growth on the surface of the semiconductor substrate 1. The method of manufacturing the semiconductor device includes a first step of forming a laminated film of a first insulating film 17 and a second insulating film 19 on the semiconductor substrate 1 when forming a first n-region 25 and a second p-region 27 as the crystal growth layers, a second step of forming an opening reaching the semiconductor substrate 1 by wet etching of the first insulating film 17 following the etching process of the second insulating film 19, and a third step of selective crystal growth of the first n-region 25 and the second p-region 27 on the surface of the semiconductor substrate 1 exposed at the bottom part of the aperture. COPYRIGHT: (C)2009,JPO&INPIT
|
